Дослідження кінетичних властивостей наноструктурованих інтеркалатів AgxIn4Se3 з метою створення фотодетекторів

B. O. Seredyuk

doi:10.33577/2312-4458.11.2014.52-55

Authors

B. O. Seredyuk Академія сухопутних військ імені гетьмана Петра Сагайдачного, Львів, кандидат фізико-математичних наук, доцент кафедри електромеханіки та електроніки, Ukraine

DOI:

https://doi.org/10.33577/2312-4458.11.2014.52-55

Keywords:

nanostructures, Hall effect, intercalation, layer crystals

Abstract

The prospects of application of photosensitive semiconductor nanostructures based on layered crystals In₄Se₃ are outlined in this article. The possibility of using the intercalated Ag_xIn₄Se₃ in the photodetectors to detect military armored vehicles is studied. The behavior of a semiconductor crystal Ag_xIn₄Se₃ in a uniform magnetic field using Hall effect is studied. The comparison of the behavior of pure In₄Se₃ and intercalated crystal by silver Ag_xIn₄Se₃ in the magnetic field and the influence of silver on the sensitivity of the crystal relative to the magnetic field disturbances are discussed in the paper. Mathematical processing of the experimental data dependence of the Hall voltage of In₄Se₃ on the magnetic field is carried out and the analytical expression of the approximating function is found.

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